Transistor IGBT 40N60A4, 600V 75A 625W:
600V, SMPS Series N-Channel IGBT
The 40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25oC and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o
• Low Conduction Loss.
Catalogue:40N60A4
Product image:
CONTACT US
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Hotline & Zalo:0901 199 508
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Email:info@duyhan.vn
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CSKH 1 & Zalo:0909 969 508
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Mail CSKH 1:quoctran@duyhan.vn
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Mail CSKH 2:nutran@duyhan.vn
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Địa chỉ: 344/7 Nguyễn Trãi, Phường An Đông, TP Hồ Chí Minh, Việt Nam.
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Address: 344/7 Nguyen Trai Street, An Dong Ward, District 5, HCMC, VietNam.
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Contact us when you need a larger quantity or need a stable supply.(Please contact with us before you arrival)
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